Properties of trench defects in InGaN/GaN quantum well...

phys stat sol (a) 2013 / 01 Vol. 210; Iss. 1

Properties of trench defects in InGaN/GaN quantum well structures

Sahonta, S.-L., Kappers, M. J., Zhu, D., Puchtler, T. J., Zhu, T., Bennett, S. E., Humphreys, C. J., Oliver, R. A.
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Volume:
210
Language:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201200408
Date:
January, 2013
File:
PDF, 634 KB
english, 2013
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