Influence of Ga doping on the microstructure of 3C-SiC...

physica status solidi (c) 2013 / 01 Vol. 10; Iss. 1

Influence of Ga doping on the microstructure of 3C-SiC layers grown on 4H-SiC substrates by VLS mechanism

Marinova, Maya, Mantzari, Alkyoni, Andreadou, Ariadne, Lorenzzi, Jean, Ferro, Gabriel, Polychroniadis, Efstathios K.
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Volume:
10
Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201200399
Date:
January, 2013
File:
PDF, 454 KB
english, 2013
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