Structural and electronic properties of InGaN/GaN nanowires by the use of EELS
Soumelidou, Maria-Marianna, Kioseoglou, Joseph, Kirmse, Holm, Komninou, Philomela, Karakostas, TheodorosVolume:
10
Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201200550
Date:
January, 2013
File:
PDF, 534 KB
english, 2013