Erratum: 10-GHz 4.69-W/mm InAlN/GaN HFET on sapphire...

physica status solidi (c) 2012 / 12 Vol. 9; Iss. 12

Erratum: 10-GHz 4.69-W/mm InAlN/GaN HFET on sapphire substrate [Phys. Status Solidi C 9 , 855-857 (2012)]

Feng, Zhihong, Liu, Bo, Yin, Jiayun, Wang, Jinjin, Gu, Guodong, Dun, Shaobo, Cai, Shujun
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Volume:
9
Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201270002
Date:
December, 2012
File:
PDF, 176 KB
english, 2012
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