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Reduction of charge trapping in HfO 2 film on a Ge substrate by trimethylaluminum pretreatment
Lee, Jae Jin, Shin, Yunsang, Choi, Juyun, Kim, Hyoungsub, Hyun, Sangjin, Choi, Siyoung, Cho, Byung Jin, Lee, Seok-HeeVolume:
6
Language:
english
Journal:
physica status solidi (RRL) - Rapid Research Letters
DOI:
10.1002/pssr.201206315
Date:
November, 2012
File:
PDF, 334 KB
english, 2012