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Physical and electrical properties of band-engineered SiO2/(TiO2)x(SiO2)1−xstacks for nonvolatile memory applications
Oh, Jinho, Na, Heedo, Mok, In-Su, Kim, Jonggi, Lee, Kyumin, Sohn, HyunchulVolume:
108
Language:
english
Journal:
Applied Physics A
DOI:
10.1007/s00339-012-6950-2
Date:
September, 2012
File:
PDF, 759 KB
english, 2012