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Electrical conduction and bipolar switching properties in transparent vanadium oxide resistive random access memory (RRAM) devices
Chen, Kai-Huang, Liao, Chin-Hsiung, Tsai, Jen-Hwan, Wu, SeanVolume:
110
Language:
english
Journal:
Applied Physics A
DOI:
10.1007/s00339-012-7116-y
Date:
January, 2013
File:
PDF, 650 KB
english, 2013