The photoelectrical properties of MIS structures based on...

Russian Physics Journal 2013 / 01 Vol. 55; Iss. 8

The photoelectrical properties of MIS structures based on heteroepitaxialn-Hg1–xCdxTe (x= 0.21–0.23)

Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Vasil’ev, V. V., Varavin, V. S., Dvoretskii, S. A., Mikhailov, N. N., Sidorov, Yu. G., Yakushev, M. V.
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Volume:
55
Language:
english
Journal:
Russian Physics Journal
DOI:
10.1007/s11182-013-9901-2
Date:
January, 2013
File:
PDF, 511 KB
english, 2013
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