Thermally Oxidized InAlN of Different Compositions for InAlN/GaN Heterostructure Field-Effect Transistors
P. Kordoš, M. Mikulics, R. Stoklas, K. Čičo, A. Dadgar, D. Grűtzmacher, A. KrostVolume:
41
Language:
english
DOI:
10.1007/s11664-012-2096-4
Date:
November, 2012
File:
PDF, 368 KB
english, 2012