Erratum to: Controllingn-Type Carrier Density from Er...

Journal of Electronic Materials 2012 / 11 Vol. 41; Iss. 11

Erratum to: Controllingn-Type Carrier Density from Er Doping of InGaAs with MBE Growth Temperature

Peter G. Burke, Trevor E. Buehl, Gilles Pernot, Hong Lu, Ali Shakouri, Chris J. Palmstrom, John E. Bowers, Arthur C. Gossard
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Volume:
41
DOI:
10.1007/s11664-012-2224-1
Date:
November, 2012
File:
PDF, 88 KB
2012
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