Tinkering with the well-tempered MOSFET: source–channel...

Superlattices and Microstructures 2000 Vol. 27; Iss. 2-3

Tinkering with the well-tempered MOSFET: source–channel barrier modulation with high-permittivity dielectrics

D.L. Kencke, Q. Ouyang, W. Chen, H. Wang, S. Mudanai, A. Tasch, S.K. Banerjee
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Volume:
27
Year:
2000
Language:
english
Pages:
8
DOI:
10.1006/spmi.1999.0803
File:
PDF, 406 KB
english, 2000
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