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Effect of single-electron interface trapping in decanano MOSFETs: A 3D atomistic simulation study
A. Asenov, R. Balasubramaniam, A.R. Brown, J.H. DaviesVolume:
27
Year:
2000
Language:
english
Pages:
6
DOI:
10.1006/spmi.2000.0879
File:
PDF, 103 KB
english, 2000