High quality Si-doped GaAs layers grown by molecular beam...

Surface Science 1979 Vol. 86; Iss. none

High quality Si-doped GaAs layers grown by molecular beam epitaxy

Takuji Shimanoe, Toshio Murotani, Masaaki Nakatani, Mutsuyuki Otsubo, Shigeru Mitsui
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Volume:
86
Year:
1979
Language:
english
DOI:
10.1016/0039-6028(79)90387-x
File:
PDF, 520 KB
english, 1979
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