Examination of the LTE model for the sputtering process...

Examination of the LTE model for the sputtering process with spectroscopy of ion induced photons (SIIP)

H. Arlinghaus, H. Bispinck
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Volume:
134
Year:
1983
Language:
english
DOI:
10.1016/0039-6028(83)90059-6
File:
PDF, 552 KB
english, 1983
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