Contrasting the 0.3 μm depth carrier concentration with...

Contrasting the 0.3 μm depth carrier concentration with dislocation density in a Si-implanted layer

Yasuyuki Saito
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Volume:
13
Year:
1992
Language:
english
DOI:
10.1016/0167-577x(92)90175-j
File:
PDF, 972 KB
english, 1992
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