Growth kinetics and characterization of low pressure chemically vapor deposited Si3N4 films from (C4H9)2SiH2 and NH3
J.M. Grow, R.A. Levy, X. Fan, M. BhaskaranVolume:
23
Year:
1995
Language:
english
DOI:
10.1016/0167-577x(95)00041-0
File:
PDF, 600 KB
english, 1995