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Physical/chemical properties of tin oxide thin film transistors prepared using plasma-enhanced atomic layer deposition
Byung Kook Lee, Eunae Jung, Seok Hwan Kim, Dae Chul Moon, Sun Sook Lee, Bo Keun Park, Jin Ha Hwang, Taek-Mo Chung, Chang Gyoun Kim, Ki-Seok AnVolume:
47
Year:
2012
Language:
english
DOI:
10.1016/j.materresbull.2012.04.120
File:
PDF, 816 KB
english, 2012