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Performance of nonvolatile memory by using band-engineered SrTiO3/HfON stack as charge-trapping layer
X.D. Huang, P.T. Lai, Johnny K.O. SinVolume:
52
Year:
2012
Language:
english
DOI:
10.1016/j.microrel.2012.04.006
File:
PDF, 481 KB
english, 2012