Effect of residual stress on the electrical activity of dislocations in GaN light emitting diodes
T. Nshanian, P.N. Grillot, M. Holub, S. Watanabe, W. GötzVolume:
52
Year:
2012
Language:
english
DOI:
10.1016/j.microrel.2012.06.046
File:
PDF, 591 KB
english, 2012