Physical analysis of Schottky contact on power AlGaN/GaN...

Microelectronics Reliability 2012 Vol. 52; Iss. 9-10

Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test

J.-B. Fonder, L. Chevalier, C. Genevois, O. Latry, C. Duperrier, F. Temcamani, H. Maanane
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Volume:
52
Year:
2012
Language:
english
DOI:
10.1016/j.microrel.2012.06.053
File:
PDF, 907 KB
english, 2012
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