Threshold voltage shift prediction for gate bias stress on...

Microelectronics Reliability 2012 Vol. 52; Iss. 9-10

Threshold voltage shift prediction for gate bias stress on amorphous InGaZnO thin film transistors

Suehye Park, Edward Namkyu Cho, Ilgu Yun
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Volume:
52
Year:
2012
Language:
english
DOI:
10.1016/j.microrel.2012.07.005
File:
PDF, 1.05 MB
english, 2012
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