Evaluation of lateral barrier height of inhomogeneous...

Materials Science in Semiconductor Processing 2012 / 10 Vol. 15; Iss. 5

Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80K to 320K

Korucu, D., Efeoglu, H., Turut, A., Altindal, S.
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Volume:
15
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2012.03.005
Date:
October, 2012
File:
PDF, 351 KB
english, 2012
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