Charge losses in segmented silicon sensors at the Si–SiO2...

Charge losses in segmented silicon sensors at the Si–SiO2 interface

Poehlsen, Thomas, Fretwurst, Eckhart, Klanner, Robert, Schuwalow, Sergej, Schwandt, Jörn, Zhang, Jiaguo
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Volume:
700
Language:
english
Journal:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
DOI:
10.1016/j.nima.2012.10.063
Date:
February, 2013
File:
PDF, 3.42 MB
english, 2013
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