Research on Material Removal Rate of CMP 6H-SiC Crystal...

Research on Material Removal Rate of CMP 6H-SiC Crystal Substrate (0001) Si Surface Based on Abrasive Alumina (Al2O3)

SU Jianxiu, DU Jiaxi, LIU Haina, Liu Xinglong
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Volume:
24
Year:
2011
Language:
english
DOI:
10.1016/j.proeng.2011.11.2673
File:
PDF, 293 KB
english, 2011
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