Silicon full wafer bonding with atomic layer deposited...

Silicon full wafer bonding with atomic layer deposited titanium dioxide and aluminum oxide intermediate films

R.L. Puurunen, T. Suni, O.M.E. Ylivaara, H. Kondo, M. Ammar, T. Ishida, H. Fujita, A. Bosseboeuf, S. Zaima, H. Kattelus
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Volume:
188
Year:
2012
Language:
english
DOI:
10.1016/j.sna.2012.05.006
File:
PDF, 1.74 MB
english, 2012
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