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Statistical device simulation of physical and electrical characteristic fluctuations in 16-nm-gate high-κ/metal gate MOSFETs in the presence of random discrete dopants and random interface traps
Li, Yiming, Cheng, Hui-WenVolume:
77
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2012.05.017
Date:
November, 2012
File:
PDF, 2.16 MB
english, 2012