Non volatile memory reliability evaluation based on oxide...

Solid-State Electronics 2012 / 12 Vol. 78

Non volatile memory reliability evaluation based on oxide defect generation rate during stress and retention test

Aziza, H., Portal, J.M., Plantier, J., Reliaud, C., Regnier, A., Ogier, J.L.
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Volume:
78
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2012.05.069
Date:
December, 2012
File:
PDF, 710 KB
english, 2012
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