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Improved programming/erasing speed of charge-trapping flash device with tunneling layer formed by low temperature nitrogen-rich SiN/SiO2 stack
Chen, Chun-Yuan, Chang-Liao, Kuei-Shu, Ho, Ji-Jan, Wang, Tien-KoVolume:
78
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2012.05.071
Date:
December, 2012
File:
PDF, 1.10 MB
english, 2012