BaTiO3 as charge-trapping layer for nonvolatile memory...

Solid-State Electronics 2013 / 1 Vol. 79

BaTiO3 as charge-trapping layer for nonvolatile memory applications

Huang, X.D., Sin, Johnny K.O., Lai, P.T.
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Volume:
79
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2012.09.005
Date:
January, 2013
File:
PDF, 456 KB
english, 2013
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