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Comments on the influence of the entrance zone in LPCVD reactors for in situ phosphoros-doped polysilicon deposition
C. Azzaro, P. Duverneuil, J.P. CoudercVolume:
48
Year:
1993
Language:
english
Pages:
8
DOI:
10.1016/0009-2509(93)80363-u
File:
PDF, 581 KB
english, 1993