A 16-Mb flash EEPROM with a new self-data-refresh scheme...

IEEE Journal of Solid-State Circuits 1994 Vol. 29; Iss. 4

A 16-Mb flash EEPROM with a new self-data-refresh scheme for a sector erase operation

Atsumi, S., Kuriyama, M., Umezawa, A., Banba, H., Naruke, K., Yamada, S., Ohshima, Y., Oshikiri, M., Hiura, Y., Yamane, T., Yoshikawa, K.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
29
Year:
1994
Language:
english
DOI:
10.1109/4.280696
File:
PDF, 928 KB
english, 1994
Conversion to is in progress
Conversion to is failed