A 120-mm2 64-Mb NAND flash memory achieving 180 ns/Byte...

IEEE Journal of Solid-State Circuits 1997 Vol. 32; Iss. 5

A 120-mm2 64-Mb NAND flash memory achieving 180 ns/Byte effective program speed

Jin-Ki Kim, Sakui, K., Sung-Soo Lee, Itoh, Y., Suk-Chon Kwon, Kanazawa, K., Ki-Jun Lee, Nakamura, H., Kang-Young Kim, Himeno, T., Jang-Rae Kim, Kanda, K., Tae-Sung Jung, Oshima, Y., Kang-Deog Suh, Has
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Volume:
32
Year:
1997
Language:
english
DOI:
10.1109/4.568831
File:
PDF, 293 KB
english, 1997
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