A scalable high-frequency noise model for bipolar...

IEEE Journal of Solid-State Circuits 1997 Vol. 32; Iss. 9

A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design

Voinigescu, S.P., Maliepaard, M.C., Showell, J.L., Babcock, G.E., Marchesan, D., Schroter, M., Schvan, P., Harame, D.L.
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Volume:
32
Year:
1997
Language:
english
DOI:
10.1109/4.628757
File:
PDF, 343 KB
english, 1997
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