A 3.3-V, 4-Mb nonvolatile ferroelectric RAM with selectively driven double-pulsed plate read/write-back scheme
Yeonbae Chung, Byung-Gil Jeon, Kang-Deog SuhVolume:
35
Year:
2000
Language:
english
DOI:
10.1109/4.841494
File:
PDF, 387 KB
english, 2000