Broad-band light-emitting diode for 1.4-2.0 μm using variable-composition InGaAs quantum wells
Fritz, I.J., Klem, J.F., Hafich, M.J., Howard, A.J., Hjalmarson, H.P.Volume:
7
Year:
1995
Language:
english
DOI:
10.1109/68.473468
File:
PDF, 329 KB
english, 1995