Doping-type dependence of turn-on delay time in 1.3-μm...

IEEE Photonics Technology Letters 1996 Vol. 8; Iss. 3

Doping-type dependence of turn-on delay time in 1.3-μm InGaAsP-InP modulation-doped strained quantum-well lasers

Niwa, A., Ohtoshi, T., Uomi, K., Nakahara, K.
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Volume:
8
Year:
1996
Language:
english
DOI:
10.1109/68.481106
File:
PDF, 296 KB
english, 1996
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