Low threshold and high uniformity for novel 1.3-/spl...

Low threshold and high uniformity for novel 1.3-/spl mu/m-strained InGaAsP MQW DC-PBH LDs fabricated by the all-selective MOVPE technique

Sakata, Y., Inomoto, Y., Saito, D., Komatsu, K., Hasumi, H.
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Volume:
9
Year:
1997
Language:
english
DOI:
10.1109/68.556050
File:
PDF, 103 KB
english, 1997
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