Low-temperature sensitive, compressively strained InGaAsP...

IEEE Photonics Technology Letters 2000 Vol. 12; Iss. 6

Low-temperature sensitive, compressively strained InGaAsP active (/spl lambda/=0.78-0.85 μm) region diode lasers

Tansu, N., Zhou, D., Mawst, L.J.
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Volume:
12
Year:
2000
Language:
english
DOI:
10.1109/68.849057
File:
PDF, 64 KB
english, 2000
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