Reduction of crystal defects in active layers of...

Reduction of crystal defects in active layers of GaAs-AlGaAs double-heterostructure lasers for long-life operation

Ishii, M., Hirofumi Kan, Susaki, W., Nishiura, H., Ogata, Y.
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Volume:
13
Year:
1977
Language:
english
DOI:
10.1109/jqe.1977.1069425
File:
PDF, 1.63 MB
english, 1977
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