A 4096-B one-transistor per bit random-access memory with...

IEEE Journal of Solid-State Circuits 1973 Vol. 8; Iss. 5

A 4096-B one-transistor per bit random-access memory with internal timing and low dissipation

Boonstra, L., Lambrechtse, C.W., Salters, R.H.W.
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Volume:
8
Year:
1973
Language:
english
DOI:
10.1109/jssc.1973.1050408
File:
PDF, 1.00 MB
english, 1973
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