CMOS voltage reference based on gate work function...

IEEE Journal of Solid-State Circuits 2003 Vol. 38; Iss. 6

CMOS voltage reference based on gate work function differences in poly-Si controlled by conductivity type and impurity concentration

Watanabe, H., Ando, S., Aota, H., Dainin, M., Yong-Jin Chun, Taniguchi, K.
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Volume:
38
Year:
2003
Language:
english
DOI:
10.1109/jssc.2003.811974
File:
PDF, 492 KB
english, 2003
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