![](/img/cover-not-exists.png)
High-power and low-divergence 980-nm InGaAs-GaAsP-AlGaAs strain-compensated quantum-well diode laser grown by MOCVD
Jun Zhao, Li, L., Wumin Wang, Yicheng LuVolume:
15
Year:
2003
Language:
english
DOI:
10.1109/lpt.2003.818660
File:
PDF, 216 KB
english, 2003