660-nm GaInP-AlGaInP quantum-well laser diode structures...

IEEE Photonics Technology Letters 2005 Vol. 17; Iss. 3

660-nm GaInP-AlGaInP quantum-well laser diode structures with reduced vertical beam divergence angle

Soohaeng Cho, Yongjo Park, Youngmin Kim
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Volume:
17
Year:
2005
Language:
english
DOI:
10.1109/lpt.2004.842324
File:
PDF, 135 KB
english, 2005
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