Lattice-Matched GaN–InAlN Waveguides at λ = 1.55 μm Grown...

IEEE Photonics Technology Letters 2008 Vol. 20; Iss. 2

Lattice-Matched GaN–InAlN Waveguides at λ = 1.55 μm Grown by Metal–Organic Vapor Phase Epitaxy

Lupu, A., Julien, F.H., Golka, S., Pozzovivo, G., Strasser, G., Baumann, E., Giorgetta, F., Hofstetter, D., Nicolay, S., Mosca, M., Feltin, E., Carlin, J.-F., Grandjean, N.
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Volume:
20
Year:
2008
Language:
english
DOI:
10.1109/lpt.2007.912551
File:
PDF, 817 KB
english, 2008
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