Improved External Quantum Efficiency of GaN p-i-n...

IEEE Photonics Technology Letters 2008 Vol. 20; Iss. 4

Improved External Quantum Efficiency of GaN p-i-n Photodiodes With a TiO2 Roughened Surface

Lin, J.C., Su, Y.K., Chang, S.J., Lan, W.H., Huang, K.C., Cheng, Y.C., Lin, W.J.
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Volume:
20
Year:
2008
Language:
english
DOI:
10.1109/lpt.2007.915620
File:
PDF, 151 KB
english, 2008
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