High-Power Tunnel-Injection 1060-nm InGaAs–(Al)GaAs...

IEEE Photonics Technology Letters 2009 Vol. 21; Iss. 14

High-Power Tunnel-Injection 1060-nm InGaAs–(Al)GaAs Quantum-Dot Lasers

Pavelescu, E.-M., Gilfert, C., Reithmaier, J.P., Martin-Minguez, A., Esquivias, I.
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Volume:
21
Year:
2009
Language:
english
DOI:
10.1109/lpt.2009.2021074
File:
PDF, 160 KB
english, 2009
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