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Very-High Temperature (200 C) and High-Speed Operation of Cascade GaN-Based Green Light- Emitting Diodes With an InGaN Insertion Layer
Jin-Wei Shi, Huang, H.-W., Kuo, F.-M., Sheu, J.-K., Lai, W.-C., Lee, M.L.Volume:
22
Year:
2010
Language:
english
DOI:
10.1109/lpt.2010.2049259
File:
PDF, 305 KB
english, 2010