DRAM Data Retention and Cell Transistor Threshold Voltage Reliability Improved by Passivation Annealing Prior to the Deposition of Plasma Nitride Layer
Chung-Yuan Lee, Chao-Sung Lai, Chia-Ming Yang, Wang, D.H.-L.Volume:
12
Year:
2012
Language:
english
DOI:
10.1109/tdmr.2012.2188895
File:
PDF, 935 KB
english, 2012