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Peculiarities of electron-energy structure of surface layers of porous silicon formed onp-type substrates
E. P. Domashevskaya, V. A. Terekhov, S. Yu. Turishchev, D. A. Khoviv, E. V. Parinova, V. A. Skryshevskii, I. V. Gavril’chenkoVolume:
48
Language:
english
DOI:
10.1134/s0020168512140063
Date:
December, 2012
File:
PDF, 243 KB
english, 2012