Effect of the finishing treatment of a gallium arsenide...

Semiconductors 2012 / 06 Vol. 46; Iss. 6

Effect of the finishing treatment of a gallium arsenide surface on the spectrum of electron states inn-GaAs (100)

Bezryadin, N. N., Kotov, G. I., Arsentyev, I. N., Vlasov, Yu. N., Starodubtsev, A. A.
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Volume:
46
Language:
english
Journal:
Semiconductors
DOI:
10.1134/s1063782612060073
Date:
June, 2012
File:
PDF, 192 KB
english, 2012
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